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| HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6616-B Issued Date : 1993.09.24 Revised Date : 2000.12.01 Page No. : 1/4 H2N6718V NPN EPITAXIAL PLANAR TRANSISTOR Description The H2N6718V is designed for general purpose medium power amplifier and switching. Absolute Maximum Ratings * Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 C Junction Temperature ................................................................................... +150 C Maximum * Maximum Power Dissipation Total Power Dissipation (Ta=25C)................................................................................... 1.6 W * Maximum Voltages and Currents BVCBO Collector to Base Voltage .................................................................................... 100 V BVCEO Collector to Emitter Voltage................................................................................. 100 V BVEBO Emitter to Base Voltage ........................................................................................... 5 V IC Collector Current .............................................................................................................. 1 A Electrical Characteristics (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO *VCE(sat) *hFE1 *hFE2 *hFE3 fT Cob Min. 100 100 5 80 50 20 50 Typ. Max. 100 350 250 20 Unit V V V nA mV Test Conditions IC=100uA, IE=0 IC=1mA, IB=0 IE=10uA, IC=0 VCB=80V, IE=0 IC=350mA, IB=35mA IC=50mA, VCE=1V IC=250mA, VCE=1V IC=500mA, VCE=1V VCE=10V, IC=50mA, f=100MHz VCB=10V, f=1MHz, IE=0 *Pulse Test : Pulse Width 380us, Duty Cycle2% MHz pF HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 1000 1000 Spec. No. : HE6616-B Issued Date : 1993.09.24 Revised Date : 2000.12.01 Page No. : 2/4 Saturation Voltage & Collector Current 100 Saturation Voltage (mV) VCE=1V hFE 100 VCE(sat) @ IC=10IB 10 0.1 1 10 100 1000 10 0.1 1 10 100 1000 Collector Current (mA) Collector Current (mA) Capacitance & Reverse-Biased Voltage 100 1000 Cutoff Frequency & Collector Current Cutoff Frequency (MHz) Capacitance (pF) VCE=10V 10 100 Cob 1 0.1 1 10 100 1000 10 1 10 100 1000 Reverse Biased Voltage (V) Collector Current (mA) Safe Operating Area 10000 1800 1600 1400 1200 1000 800 600 400 200 Power Derating 100 PT=1 ms PT=100 ms 10 PT=1 s Power Dissipation-PD(mW) Collector Current-IC (mA) 1000 1 1 10 100 1000 0 0 20 40 60 80 100 o 120 140 160 Forward Voltage-VCE (V) Ambient Temperature-Ta( C) HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6616-B Issued Date : 1993.09.24 Revised Date : 2000.12.01 Page No. : 3/4 IR Reflow Profile 260 240 220 200 250 10+/-2 sec 300 Temperature Profile for Dip Soldering 10+/-2 sec Temperature( C) Temperature( C) 180 160 140 120 100 80 60 40 20 0 0 50 100 150 200 250 300 150+/-30 40+/-20 sec 200 o o 150 100 120+/-20 sec 50 0 0 50 100 150 200 250 300 350 Time(sec) Time(sec) HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-126ML Dimension Marking : Spec. No. : HE6616-B Issued Date : 1993.09.24 Revised Date : 2000.12.01 Page No. : 4/4 A B D E F 3 2 I G 1 J M L K O H HSMC Logo Part Number Date Code Product Series Rank Ink Marking C Style : Pin 1.Emitter 2.Collector 3.Base N 3-Lead TO-126ML Plastic Package HSMC Package Code : D *:Typical DIM A B C D E F G H Inches Min. Max. 0.1356 0.1457 0.0170 0.0272 0.0344 0.0444 0.0501 0.0601 0.1131 0.1231 0.0737 0.0837 0.0294 0.0494 0.0462 0.0562 Millimeters Min. Max. 3.44 3.70 0.43 0.69 0.87 1.12 1.27 1.52 2.87 3.12 1.87 2.12 0.74 1.25 1.17 1.42 DIM I J K L M N O Inches Min. Max. *0.1795 0.0268 0.0331 0.5512 0.5906 0.2903 0.3003 0.1378 0.1478 0.1525 0.1625 0.0740 0.0842 Millimeters Min. Max. *4.56 0.68 0.84 14.00 15.00 7.37 7.62 3.50 3.75 3.87 4.12 1.88 2.14 Notes : 1.Dimension and tolerance based on our Spec. dated Mar. 6,1995. 2.Controlling dimension : millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material : * Lead : 42 Alloy ; solder plating * Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory : * Head Office (Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454 * Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel : 886-3-5983621~5 Fax : 886-3-5982931 * Factory 2 : No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel : 886-3-5977061 Fax : 886-3-5979220 HSMC Product Specification |
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